Везде

RAS PhysicsРадиотехника и электроника Journal of Communications Technology and Electronics

  • ISSN (Print) 0033-8494
  • ISSN (Online) 3034-5901

On the influence of oxygen bombardment on the structure formation of hafnium oxide films

You can
PII
10.31857/S0033849424110058-1
DOI
10.31857/S0033849424110058
Publication type
Article
Status
Published
Authors
V. A. Luzanov
  • Affiliation: Fryazino Branch Kotelnikov Institute of Radioengineering and Electronics of RAS
Volume/ Edition
Volume 69 / Issue number 11
Pages
1076-1078
Abstract
Hafnium oxide films were deposited by magnetron reactive sputtering under oxygen bombardment conditions. Structural analysis showed that the presence of oxygen bombardment during film growth leads to changes in the short-range order in the crystal structure of the films obtained.
Keywords
оксид гафния кислородная бомбардировка фазовый переход
Date of publication
16.09.2025
Year of publication
2025
Number of purchasers
0
Views
13

References

  1. 1. Böscke T., Müller J., Bräuhaus D. et al. // Int. Electron Devices Meeting. 2011. P. 24.5.1.
  2. 2. Grüger H., Kunath C., Kurth E. et al. // Thin Solid Films. 2004. № 447. P. 509.
  3. 3. Cavalieri M., O’Connor É., Gastaldi C. et al. // ACS Appl. Electron. Mater. 2020. V. 2. № 6. P. 1752.
  4. 4. He J. Q., Teren A., Jia C. L. et al. // J. Сrystal Growth. 2004. № 262. P. 295.
  5. 5. Tongpenga S., Makbuna K., Peanporma P. et al. // Materials Today: Proceedings. 2019. V. 17. Pt. 4. P. 1555.
  6. 6. Belo G. S., Nakagomi F., Minko A. et al. // Appl. Surf. Sci. 2012. № 261. P. 727.
  7. 7. Лузанов В. А., Алексеев С. Г., Ползикова Н. И. // РЭ. 2018. Т. 63. № 9. P. 1015.
QR
Translate

Индексирование

Scopus

Scopus

Scopus

Crossref

Scopus

Higher Attestation Commission

At the Ministry of Education and Science of the Russian Federation

Scopus

Scientific Electronic Library