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RAS PhysicsРадиотехника и электроника Journal of Communications Technology and Electronics

  • ISSN (Print) 0033-8494
  • ISSN (Online) 3034-5901

Structure of aluminum films for creating tunnel junctions.

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PII
10.31857/S0033849423100157-1
DOI
10.31857/S0033849423100157
Publication type
Status
Published
Authors
M. V. Strelkov
  • Affiliation: Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
Volume/ Edition
Volume 68 / Issue number 10
Pages
998-1002
Abstract
A series of studies of the structure of aluminum films deposited on single-crystal silicon substrates in different temperature conditions. The roughness and grain size of films of nuclei 20 nm thick, deposited at elevated temperatures, and also dusted on top of the seed layer at room temperature to a thickness of 150 nm. The film profile was measured in an electron microscope. It was found that films on the hot sublayer turn out to be smoother, more rigid (less loose) and allow one to expect the creation of superconductor–insulator–superconductor and superconductor–insulator–normal metal transitions, respectively, with a higher current density and lower capacitance.
Keywords
aluminum films single-crystal silicon substrates superconductor– insulator– superconductor superconductor–insulator–normal metal transitions
Date of publication
16.09.2025
Year of publication
2025
Number of purchasers
0
Views
15

References

  1. 1. Rodionov I., Baburin A., Gabidullin A., et al. // Sci. Rep. 2019. V. 9. Article No. 12232.
  2. 2. Greibe T., Stenberg M., Wilson C. et al. // Phys. Rev. Lett. 2011. V. 106. № 9. Article No. 097001.
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