- PII
- 10.31857/S0033849423020080-1
- DOI
- 10.31857/S0033849423020080
- Publication type
- Status
- Published
- Authors
- Volume/ Edition
- Volume 68 / Issue number 3
- Pages
- 295-304
- Abstract
- A transition is made from piecewise continuous functions of the memristor model with threshold type switching to differentiable functions described by a single formula. Systems of equations are obtained and numerically solved for circuit sections in which the memristive device is connected in series with other discrete elements, a conventional resistor, diode, inductor, and capacitor. For the case of a serial connection of a memristor and a resistor, the calculated data are compared with the experiment. The case of series connection of a memristor and a semiconductor diode has been studied in detail. The assumptions concerning the mathematical description and physical interpretation of the influence of the molding process on the memristive system are presented.
- Keywords
- memristor semiconductor diode molding process
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 6
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