ГОСТ
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Агеева Н. Изменения собственного стимулированного интенсивного пикосекундного излучения гетероструктуры AlxGa1–xAs-GaAs-AlxGa1–xAs из-за возвращения в активную область отраженной от торца гетероструктуры части излучения // Радиотехника и электроника. – 2025. – T. 70. – Номер выпуска 1 C. 65-72 . URL: https://radiotechras.ru/s0033849425010071-1/?version_id=108115. DOI: 10.31857/S0033849425010071 |
MLA
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Ageeva, N. N "Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region." Journal of Communications Technology and Electronics. 70.1 (2025).:65-72. DOI: 10.31857/S0033849425010071 |
APA
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Ageeva N. (2025). Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region. Journal of Communications Technology and Electronics. vol. 70, no. 1, pp.65-72 DOI: 10.31857/S0033849425010071 |