Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region

Ageeva, N. N.

doi:10.31857/S0033849425010071

PII

S0033849425010071-

DOI

10.31857/S0033849425010071

Publication type

Article

Status

Published

Authors

N. N. Ageeva

Affiliation: Kotel’nikov Institute of Radioengeneering and Electronics RAS

Volume/ Edition

Volume 70 / Issue number 1

Pages

65-72

Abstract

Quenching of the generation of the intrinsic stimulated intense picosecond emission of the Al_xGa_1–xAs-GaAs-Al_xGa_1–xAs heterostructure, emerging from its end, has been detected. Quenching occurs when those part of the emission reflected from the end of the heterostructure returns to the active region. This new effect allows decreasing the emission duration by up to 7.5 times.

Keywords

нелинейная динамика стимулированное пикосекундное излучение гашение генерации излучения гетероструктура распределенный брэгговский отражатель фотонный кристалл сокращение длительности излучения

Date of publication

16.09.2025

Year of publication

2025

Number of purchasers

Views

References

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GOST	Ageeva N. Changes in the intrinsic stimulated intense picosecond emission of the Al_xGa_1–xAs-GaAs-Al_xGa_1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region // Journal of Communications Technology and Electronics. – 2025. – V. 70. – Issue number 1 C. 65-72 . URL: https://radiotechras.ru/s0033849425010071-1/?version_id=108115. DOI: 10.31857/S0033849425010071
MLA	Ageeva, N. N "Changes in the intrinsic stimulated intense picosecond emission of the Al_xGa_1–xAs-GaAs-Al_xGa_1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region." Journal of Communications Technology and Electronics. 70.1 (2025).:65-72. DOI: 10.31857/S0033849425010071
APA	Ageeva N. (2025). Changes in the intrinsic stimulated intense picosecond emission of the Al_xGa_1–xAs-GaAs-Al_xGa_1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region. Journal of Communications Technology and Electronics. vol. 70, no. 1, pp.65-72 DOI: 10.31857/S0033849425010071

RAS PhysicsРадиотехника и электроника Journal of Communications Technology and Electronics

Changes in the intrinsic stimulated intense picosecond emission of the Al_xGa_1–xAs-GaAs-Al_xGa_1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region

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RAS PhysicsРадиотехника и электроника Journal of Communications Technology and Electronics

Changes in the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region

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Changes in the intrinsic stimulated intense picosecond emission of the Al_xGa_1–xAs-GaAs-Al_xGa_1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region