- PII
- 10.31857/S0033849424090124-1
- DOI
- 10.31857/S0033849424090124
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 69 / Issue number 9
- Pages
- 908-923
- Abstract
- Epitaxial NiO films on LiNbO3 substrates were produced using magnetron sputtering. Optimal conditions for deposition of NiO films to achieve their high crystalline perfection were found. Optical properties of NiO films were studied in the wavelength range of 250...800 nm. The band gap of nickel oxide was determined. Semiconductor diode structures in the form of interdigital Schottky barrier contacts to the epitaxial NiO film were fabricated. The current-voltage characteristics of the diode structures demonstrate low dark currents and the possibility of creating photodetectors for the UV part of the spectrum with a long-wavelength boundary of 340 nm on their basis.
- Keywords
- эпитаксиальные пленки оптические свойства пленок полупроводниковые структуры барьер Шоттки фотодетектор темновой ток
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 20
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