Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics

Belorusov, D. A.

doi:10.31857/S0033849424070076

PII

10.31857/S0033849424070076-1

DOI

10.31857/S0033849424070076

Publication type

Article

Status

Published

Authors

D. A. Belorusov

Occupation: Fryazino branch<i> </i>
Affiliation: Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences

Volume/ Edition

Volume 69 / Issue number 7

Pages

656-663

Abstract

An algorithm has been developed for determining from experimental field dependences the high–frequency impedance of silicon structures with an ultrathin (less than 5 nm) SiO₂ layer of the insulating gap capacity and concentration of dopant directly at the Si-SiO₂ interface. Relations allowing to estimate marginal errors of the developed approach are obtained. The proposed method is applied to experimental characteristics of the metal–oxide–semiconductor structure with a thickness of SiO₂ 4.2 nm. It is shown that the developed algorithm has sufficiently high accuracy and accessibility for use in processing high-frequency measurement data.

Keywords

структуры металл-окисел-полупроводник сверхтонкий изолирующий промежуток высокочастотные вольт-фарадные характеристики

Date of publication

16.09.2025

Year of publication

2025

Number of purchasers

Views

References

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GOST	Belorusov D. Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics // Journal of Communications Technology and Electronics. – 2024. – V. 69. – Issue number 7 C. 656-663 . URL: https://radiotechras.ru/10-31857-s0033849424070076-1/?version_id=111090. DOI: 10.31857/S0033849424070076
MLA	Belorusov, D. A "Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics." Journal of Communications Technology and Electronics. 69.7 (2024).:656-663. DOI: 10.31857/S0033849424070076
APA	Belorusov D. (2024). Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics. Journal of Communications Technology and Electronics. vol. 69, no. 7, pp.656-663 DOI: 10.31857/S0033849424070076

RAS PhysicsРадиотехника и электроника Journal of Communications Technology and Electronics

Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics

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References

Индексирование

RAS PhysicsРадиотехника и электроника Journal of Communications Technology and Electronics

Determination of constants and construction of field dependences of parameters of metal-oxide-semiconductor structures with ultrathin layers of silicon oxide based on their experimental high-frequency voltage-capacitance-characteristics

You can

References

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